No, SDRAM means Synchronous DRAM, where the data is clocked out of the DRAM chips instead of just appearing on the bus some time after the Column Address Strobe is asserted. Clocking it means that the data doesn't appear before the CPU (or other bus master) is ready to receive it, and that it doesn't disappear before the CPU has read it.

Static RAM (SRAM) is a circuit that retains its data as long as the power is supplied to it. Dynamic RAM (DRAM) must be refreshed frequently. It's basically a large array of tiny capacitors which leak their stored charge through imperfect transistor switches, so a charged capacitor must be regularly recharged. You would think that you would need to read the bit and rewrite its value in a second cycle, but it turns out that reading the value is itself a destructive operation and requires the chip to internally recharge the capacitors.

Further, the chip is organised in rows and columns - generally there are the same number of Sense Amplifiers as columns, with a whole row of cells discharging into their corresponding Sense Amplifiers on each read cycle, the Sense Amplifiers then being used to recharge that row of cells. The column signals select which Sense Amplifier is connected to the output. So you don't need to read every row and column of a chip, just some column on every row. The Sense Amplifier is a circuit that takes the very tiny charge from the cell transistor and brings it up to a stable signal voltage for the output.

So why use DRAM at all if it has this need to be constantly refreshed? Because the Static RAM circuit requires 4-6 transistors per cell, while DRAM only requires 1. You get close to 4-6 times as much storage from the same number of transistors.