You can still scale SRAM by stacking it in 3D layers, similar to the common approach now used with NAND flash. I think HBM DRAM is also directly stacked on-die to begin with, apparently that's the best approach to scaling memory bandwidth too.
It'll be interesting to see if we get any kind of non-NAND persistent memory in the near future, that might beat some performance metrics of both DRAM and NAND flash.
NAND is built with dozens of layers on one die. HBM DRAM is a dozen-ish dies stacked and interconnected with TSVs, but only one layer of memory cells per die. AMD's X3D CPUs have a single SRAM die stacked on top of the regular CPU+SRAM, with TSVs in the L3 cache to connect to the extra SRAM. I'm not aware of anyone shipping a product that stacks multiple SRAM dies; the tech definitely exists but it may not be economically feasible for any mass-produced product.