Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm

FET: https://en.wikipedia.org/wiki/Field-effect_transistor

How about heat? Seems these days it's the heat above everything else that's the issue. And more density would only aggravate it.

This seems like it could accelerate the transition to sub-1nm nodes (previously projected to mid 2030s), maybe by the end of this decade.

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