Anyone know why it took so long for them to transition to 300mm? As mentioned in the article, they're mainly using existing 300mm equipment designed for silicon, which transitioned years ago. I imagine some process steps are different (mainly growing to larger boule, but probably others), but it doesn't seem like they would be huge blockers.
Larger dies == more material == more chance for impurities to wreck the crystal.
Chasing 9’s is very hard already (both uptime and purity), and by the time you start getting into 6+ digits of 9’s? Really really hard.
SiC is just in general an extremely unforgiving material to work with. The stars just didn't align for 300mm wafers until now.