alt Hacker News> logic technology can extend for the first time below the 1 nm node, advancing the era of angstrom-level scaling, where dimensions approach the size of individual atoms. While transistor nodes now refer to a generation of manufacturing technology versus an exact physical dimension, IBM’s 0.7 nm technology—also referred to as 7 angstroms—demonstrates how continued scaling remains possible.
Continuing the well established trend of making bold claims about physical dimensions that have nothing to do with any of the structures in the chip, and the name scales better than the tech.
What they actually deliver is a "nanostack architecture" built with ~5nm features that according to them is comparable to a hypothetical real sub-1nm chip.
It's an impressive achievement nonetheless but it looks like the industry has a few too many marketers.
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Unlike marketing terms, "nm density" is actually useful measure.
It describes density measure where you can compare it to planar transistors from the 28-nanometer (28 nm) node around 2010 to 2011 and before. A "0.7 nm" node has equivalent transistor density as if we could have shrunk standard flat transistor node down to 0.7 nanometers.
It's been decades since published node sizes had any connection to actual feature size. Sadly this is just how it works in the semiconductor industry now.
My read on it was that they are trying to imply a transistor density (in a 2D plane sense) that is comparable to a 1nm process? But they achieve that through stacking (3D, not 2D) since the features aren't actually anywhere near 1nm?
yeah, where on the pictures is the 0.7nm feature? The linespacing is around 5nm. Is it the white line which is 0.7nm?
Better metrics are transistors/mm^2, performance/watt, and raw performance, since at this point "nm" is fluff and easily game-able.
Different companies measure it differently too. This was a while ago, but I remember reading that Intel 10nm was more or less close to TSMC 7nm. I'm sure this is still true to varying degrees.
On the otherhand, no investor really cares what it's called, they just need to know it's next gen.
> Continuing the well established trend of making bold claims about physical dimensions that have nothing to do with any of the structures in the chip, and the name scales better than the tech.
We care about PPA (power, performance, area) and not how large or not-large features actually are. Comparing gate lengths between a 1980s planar transistor and a 2010s 3D FinFET or GAA transistor is obviously nonsense, the relatively aligned node names of the industry actually do make sense as a shortcut here.
As it can be seen from the photos, horizontally the features are much bigger than 5 nm.
For silicon, the gate length of a FET has a lower limit somewhere between 10 nm and 15 nm.
The current CMOS manufacturing processes have not reached the limit yet. For making smaller transistors, a transition to other semiconductor materials will be necessary.
The vertical thicknesses of various layers may be of only a few nanometers or even of a fraction of a nanometer, but that does not matter directly for the circuit density.
The supposed node size refers to horizontal dimensions, not to vertical dimensions.
Vertical dimensions of around 1 nanometer or less could be achieved already many decades ago, because they depend on growth speed and on time, not on lithography, like the horizontal dimensions.
The industry should have stopped decades ago to talk about the "size" but they should have characterized a CMOS process by its density, e.g. in logic gates per square mm.
However, an actual concrete number would be disliked by marketing, because they could no longer claim that their "1 nm" process is better than the "2 nm" process of another vendor, if their density is not really better.